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Low Temperature Anneal to Enhance Yield and Reliability Improvement by Eliminating Parametric Degradation

IP.com Disclosure Number: IPCOM000060378D
Original Publication Date: 1986-Mar-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Chaudhari, PK: AUTHOR

Abstract

In the manufacture of field-effect transistors (FETs) there exists a problem of threshold voltage shift of the devices under temperature and bias stress. This problem is alleviated by annealing these devices at low temperatures so as to eliminate the impact of hot electron trapping at moisture-related traps on the Vt shift. In LSI/VLSI IC (large-scale integration/very large-scale integration integrated circuit) technology, parametric degradation has been a reliability concern. This is especially so with a hot electron trapping-induced threshold voltage shift which may result in malfunction of the device. The problem becomes more severe as the physical dimensions of these devices shrink.

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Low Temperature Anneal to Enhance Yield and Reliability Improvement by Eliminating Parametric Degradation

In the manufacture of field-effect transistors (FETs) there exists a problem of threshold voltage shift of the devices under temperature and bias stress. This problem is alleviated by annealing these devices at low temperatures so as to eliminate the impact of hot electron trapping at moisture-related traps on the Vt shift. In LSI/VLSI IC (large-scale integration/very large-scale integration integrated circuit) technology, parametric degradation has been a reliability concern. This is especially so with a hot electron trapping-induced threshold voltage shift which may result in malfunction of the device. The problem becomes more severe as the physical dimensions of these devices shrink. A conventional method to enhance yield and reliability is to burn-in parts using a static/dynamic burn at high temperature before the parts are shipped. This method primarily works to screen the parts to determine existence of gate short problems. No such procedure, as noted above, is available to account for a device wear-out problem. This disclosure provides a way to eliminate the hot electron-induced threshold shift so as to improve reliability and yield of the process. In analyzing the hot electron-induced instability, it was found the cause to be the trapping of hot electrons due to moisture present in the device structure. Elimination of these traps is achieved by the si...