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Browse Prior Art Database

Use of Rapid Thermal Annealing in the Production of Double Diffused Lateral PNP Transistors

IP.com Disclosure Number: IPCOM000060390D
Original Publication Date: 1986-Mar-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Altieri, J: AUTHOR [+5]

Abstract

A process for the fabrication of a double diffused lateral PNP structure is disclosed in U.S. Patent 4,180,827. The use of rapid thermal annealing (RTA) to activate ion-implanted boron is described in U.S. Patent 4,482,393. The process can be improved by using boron implantation to dope the PNP emitter and then RTA to activate the implanted boron. In this improved process, the RTA step, which includes exposure of the semiconductor material to noncoherent light to heat the material to approximately l150ŒC for between 30 and 60 seconds, activates the ion-implanted boron in the emitter and causes most of the boron atoms to be put into substitutional sites.

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Use of Rapid Thermal Annealing in the Production of Double Diffused Lateral PNP Transistors

A process for the fabrication of a double diffused lateral PNP structure is disclosed in U.S. Patent 4,180,827. The use of rapid thermal annealing (RTA) to activate ion-implanted boron is described in U.S. Patent 4,482,393. The process can be improved by using boron implantation to dope the PNP emitter and then RTA to activate the implanted boron. In this improved process, the RTA step, which includes exposure of the semiconductor material to noncoherent light to heat the material to approximately l150OEC for between 30 and 60 seconds, activates the ion-implanted boron in the emitter and causes most of the boron atoms to be put into substitutional sites. The RTA permits the fabrication of the lateral PNP provided it is done as the last process step in the fabrication and is not followed by any other hot process or high temperature furnace annealing steps. The use of RTA after the PNP emitter anneal results in a higher double diffused PNP boron emitter peak concentration and results in the desired emitter profile for high emitter efficiency.

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