Browse Prior Art Database

Improved Gas Purge System for Epitaxial Reactors

IP.com Disclosure Number: IPCOM000060606D
Original Publication Date: 1986-Mar-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Walsh, TJ: AUTHOR [+2]

Abstract

In conventional epitaxial deposition systems, one hydrogen gas purge system is used to supply both the outer housing assembly and the reaction chamber. In this configuration, the input gas passes over the rotation mechanism located outside the reaction chamber and carries with it all the contaminants that are produced by the mechanism into the reaction chamber. These contaminants can cause defects in the final product and increase time required to clean the reaction chamber.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Improved Gas Purge System for Epitaxial Reactors

In conventional epitaxial deposition systems, one hydrogen gas purge system is used to supply both the outer housing assembly and the reaction chamber. In this configuration, the input gas passes over the rotation mechanism located outside the reaction chamber and carries with it all the contaminants that are produced by the mechanism into the reaction chamber. These contaminants can cause defects in the final product and increase time required to clean the reaction chamber.

This article describes the use of a two-nozzle gas purge subsystem, as shown in the drawing. A single gas source 10 supplies outer housing 11, containing rotation mechanism 12, and the epitaxial reaction chamber 13 through nozzles 14 and 15, respectively. The gas entering housing 11 through nozzle 14 is exhausted through port 16.

The dual nozzle purge system reduces contaminants and the down time required for servicing the epitaxial reactor.

Disclosed anonymously.

1