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Grounding Grid for Flexible Diode Etcher

IP.com Disclosure Number: IPCOM000060635D
Original Publication Date: 1986-Mar-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Dhong, SH: AUTHOR [+3]

Abstract

Non-uniformity in the etching of polysilicon with chlorinated gases in flexible diode etchers is solved by inserting a grounding grid between the substrate and counter electrodes. A perforated aluminum grid is installed 10 cm below the cou electrode, but 5 cm above the substrate electrode in the flexible diode etchers. In addition, the grid is grounded to the substrate electrode dark space shield. Uniformity in batch etching is achieved by the grid in that the existing field is made radially symmetric and the gas flow is uniformly distributed over the substrate electrode. The grid also allows high etch rates at low self-bias voltages which facilitates profile control. As the grid decouples the plasmas, the bias voltage may be controlled independently of the power supplied to the counter electrode.

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Grounding Grid for Flexible Diode Etcher

Non-uniformity in the etching of polysilicon with chlorinated gases in flexible diode etchers is solved by inserting a grounding grid between the substrate and counter electrodes. A perforated aluminum grid is installed 10 cm below the cou electrode, but 5 cm above the substrate electrode in the flexible diode etchers. In addition, the grid is grounded to the substrate electrode dark space shield. Uniformity in batch etching is achieved by the grid in that the existing field is made radially symmetric and the gas flow is uniformly distributed over the substrate electrode. The grid also allows high etch rates at low self-bias voltages which facilitates profile control. As the grid decouples the plasmas, the bias voltage may be controlled independently of the power supplied to the counter electrode.

Disclosed anonymously.

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