Browse Prior Art Database

Epitaxial Compensation of Trench Etch Bias

IP.com Disclosure Number: IPCOM000060668D
Original Publication Date: 1986-Apr-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kenney, DM: AUTHOR

Abstract

This article describes a technique which may be used to compensate for image size and/or photo and etch bias.

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This is the abbreviated version, containing approximately 100% of the total text.

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Epitaxial Compensation of Trench Etch Bias

This article describes a technique which may be used to compensate for image size and/or photo and etch bias.

During the reactive ion etch (RIE) of a trench in silicon, usually some degree of etch bias occurs. Trench etch bias becomes an important dimensional consideration as horizontal dimensions decrease and obtaining zero bias in deep trenchs becomes increasingly difficult to achieve. An epitaxial (single crystal) l on the trench sidewalls can eliminate or even reverse this trend.

The Figure shows a trench cross-section with the initial lithographic image size 10 and the actual trench image size due to etch bias 11. An epitaxial silicon deposition on the trench side walls 12 will compensate for trench etch bias and restore the trench to the initial lithographic image size 10.

Disclosed anonymously.

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