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Transferred-Electron Static Memory Cell

IP.com Disclosure Number: IPCOM000060840D
Original Publication Date: 1986-May-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Van Zeghbroeck, BJ: AUTHOR

Abstract

Proposed is a static memory cell with a series connection of two transferred-electron devices which, due to the negative resistance characteristic of these devices, provides for two stable states. The circuit of the memory cell, which is illustrated in Fig. 1, consists of two transferred-electron devices A and B connected in series between the power supply VDC and ground. The cell operation is based on the negative differential resistance of the transferred- electron devices used. As a larger field is applied to such device, the electrons transfer into the higher band minima where they have a larger effective mass. This causes the current to decrease with increasing voltage. Fig. 2 illustrates the I-V curve B and the load line A of the circuit having the two stable states "0" and "1", as indicated in the diagram.

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Transferred-Electron Static Memory Cell

Proposed is a static memory cell with a series connection of two transferred- electron devices which, due to the negative resistance characteristic of these devices, provides for two stable states. The circuit of the memory cell, which is illustrated in Fig. 1, consists of two transferred-electron devices A and B connected in series between the power supply VDC and ground. The cell operation is based on the negative differential resistance of the transferred- electron devices used. As a larger field is applied to such device, the electrons transfer into the higher band minima where they have a larger effective mass. This causes the current to decrease with increasing voltage. Fig. 2 illustrates the I-V curve B and the load line A of the circuit having the two stable states "0" and "1", as indicated in the diagram. By driving current into connecting node C, switching from one stable state to the other can be achieved. In an array, the cell can be addressed by applying currents to the lines X and Y associated with the cell. Current then flows through pass transistor T into connecting node C. Transferred-electron devices provide the required negative differential resistance characteristic. One example is the Gunn-diode. Negative differential resistance due to the forming of Gunn-domains has also been observed in short channel InGaAs junction FETs and in short GaAs MESFETs. Tunnel diodes could also be used even though they are...