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Variable Depth Contact Hole Preparation Utilizing a Nucleation Layer and Selective Chemical Vapor Deposition for Stud Formation

IP.com Disclosure Number: IPCOM000061043D
Original Publication Date: 1986-Jun-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Cronin, JE: AUTHOR [+2]

Abstract

This article describes a selective chemical vapor deposition (CVD) method for filling contact holes of various depths. In general, deposition techniques which depend upon film growth from bottom to top provide irregular topologies when they are utilized as a means of fabricating interconnection studs in contact vias having different depths. Specifically, the shallow vias will be filled before the deeper vias. While conformal blanket depositions and etch-back techniques fill holes of various depths, the etch-back process is hard to control and leaves steps in the topology. Shown in Fig. 1a is a technique for growing studs by first preparing a contact hole for the CVD process by application of a monolayer of bondable linkages on all of the exposed surfaces.

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Variable Depth Contact Hole Preparation Utilizing a Nucleation Layer and Selective Chemical Vapor Deposition for Stud Formation

This article describes a selective chemical vapor deposition (CVD) method for filling contact holes of various depths. In general, deposition techniques which depend upon film growth from bottom to top provide irregular topologies when they are utilized as a means of fabricating interconnection studs in contact vias having different depths. Specifically, the shallow vias will be filled before the deeper vias. While conformal blanket depositions and etch-back techniques fill holes of various depths, the etch-back process is hard to control and leaves steps in the topology. Shown in Fig. 1a is a technique for growing studs by first preparing a contact hole for the CVD process by application of a monolayer of bondable linkages on all of the exposed surfaces. A contact hole 10 is reactive ion etched (RIE) to create nearly vertical walls 11 in an insulator of silicon oxide or boron phosphorus silicon glass (BPSG) 12 through a mask 13. Next, an appropriate chemisorbed monolayer of organic molecules containing subsequent metal bondable linkages is deposited (not shown), followed by an isotropic etch process which produces bondable linkages on the conductor surface 14, insulator side walls 11 and on exposed surfaces of mask 13. After an appropriate mask removal step, a selective CVD metal deposition is performed to completely fill the hole. Fig....