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Method for Forming Interlevel Insulated Layers for Improved In- Tralevel Insulation And Elimination of Extrusion Fails

IP.com Disclosure Number: IPCOM000061141D
Original Publication Date: 1986-May-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Dalal, HM: AUTHOR [+3]

Abstract

In the development of semiconductor there is the possibility that intralevel shorts can develop due to metal extrusion into insulator between adjacent metal lines on the same metal level. plasma nitride used on an underlying metal pattern reduces the likelihood of some shorts. It also reduces interlevel shorts due to the presence of this plasma nitride layer between two metal levels.

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Method for Forming Interlevel Insulated Layers for Improved In- Tralevel Insulation And Elimination of Extrusion Fails

In the development of semiconductor there is the possibility that intralevel shorts can develop due to metal extrusion into insulator between adjacent metal lines on the same metal level. plasma nitride used on an underlying metal pattern reduces the likelihood of some shorts. It also reduces interlevel shorts due to the presence of this plasma nitride layer between two metal levels.

In semiconductor devices, metals migrate due to current flow and pressure buildup occurs within the lines where movement is restricted. However, the adhesion characteristics of a composite plasma nitride/nitride interface is much stronger than that of the conventional type and resists such extrusion. The compressive strength of plasma nitride is also much stronger than th of quartz and therefore restricts the movement of metal between two adjacent lines.

The procedure for making composite insulation involves relatively straightforward plasma nitride deposition technology. A thin layer 1 of plasma silicon nitride is deposited upon a pre-cleaned structure comprising metal lines 4 and silicon nitride layer 2 on silicon oxide layer 3. This is followed by the deposition of a thick layer of planar or standard quartz 5. A second thin layer of plasma nitride 6 is then deposited on the quartz to complete the total insulator.

Disclosed anonymously.

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