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A Controlled Isotropic Reactive Ion Etch Process for Sloped Nitride Sidewalls

IP.com Disclosure Number: IPCOM000061142D
Original Publication Date: 1986-May-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Marinaccio, FA: AUTHOR [+3]

Abstract

A method has been developed for etching sloped nitride sidewalls in semiconductors with minimum etch bias loss. The method makes it possible to eliminate a process step, ribbon etch, through controlled isotropic etching in a diode chamber.

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A Controlled Isotropic Reactive Ion Etch Process for Sloped Nitride Sidewalls

A method has been developed for etching sloped nitride sidewalls in semiconductors with minimum etch bias loss. The method makes it possible to eliminate a process step, ribbon etch, through controlled isotropic etching in a diode chamber.

The new method uses a combination of flow rate, pressure, and gas composition to etch sidewalls with a desired slope as compared with a standard process yielding vertical sidewalls.

The standard anisotropic reactive ion etch process for etching silicon nitride, which results in vertical sidewalls, uses CF4 at a flow rate of about 30 sccm and a reactor pressure of about 30 microns. To achieve a slope of about 50OE the pressure is increased to about 150 microns, the CF4 flow rat increased to about 150 sccm, and O2 is introduced into the reactor at a flow rate of about 30 sccm. No change in power is required. The sidewall angle can be increased by reducing pressure and the CF4 and O2 flow rates at the same power.

Disclosed anonymously.

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