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PERSISTENT PHOTOCONDUCTIVITY CONTROL IN GaAs CHANNEL AlGaAs GATE DEVICES

IP.com Disclosure Number: IPCOM000061299D
Original Publication Date: 1986-Jul-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Heiblum, M: AUTHOR [+3]

Abstract

Persistent photoconductivity that may cause a shift in switching threshold and changes in transconductance in GaAs channel AlGaAs gate devices can be controlled by an n-type doped buffer layer in the substrate. The structure is as shown in the figure. (Image Omitted) The effect of the n doped buffer layer is to eliminate the field that separates hole electron pairs, and if a hole is trapped rather than recombining directly, majority carrier electrons will be available to neutralize the trap. The n doping is terminated 200-300 ˜ before the channel to prevent mobility degradation.

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PERSISTENT PHOTOCONDUCTIVITY CONTROL IN GaAs CHANNEL AlGaAs GATE DEVICES

Persistent photoconductivity that may cause a shift in switching threshold and changes in transconductance in GaAs channel AlGaAs gate devices can be controlled by an n-type doped buffer layer in the substrate. The structure is as shown in the figure.

(Image Omitted)

The effect of the n doped buffer layer is to eliminate the field that separates hole electron pairs, and if a hole is trapped rather than recombining directly, majority carrier electrons will be available to neutralize the trap. The n doping is terminated 200-300 ~ before the channel to prevent mobility degradation.

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