Browse Prior Art Database

Deposition of Silicon Nitride

IP.com Disclosure Number: IPCOM000061302D
Original Publication Date: 1986-Jul-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Mendez, EE: AUTHOR [+3]

Abstract

The damage in semiconductor structures caused by high energy processes for the deposition of silicon nitride (Si3N4) is avoided by the use of ultraviolet light in a photochemical deposition operation involving SiH4 and NH3 in which no high energy ions are produced and, in turn, subsequent annealing to overcome high energy ion damage is not required.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Deposition of Silicon Nitride

The damage in semiconductor structures caused by high energy processes for the deposition of silicon nitride (Si3N4) is avoided by the use of ultraviolet light in a photochemical deposition operation involving SiH4 and NH3 in which no high energy ions are produced and, in turn, subsequent annealing to overcome high energy ion damage is not required.

1