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Excimer Laser Polysilicon Patterning

IP.com Disclosure Number: IPCOM000061394D
Original Publication Date: 1986-Jun-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Braren, B: AUTHOR [+3]

Abstract

After blanket deposition on a silicon wafer of a layer, such as polysilicon, it is difficult to detect the alignment patterns for further processing. The method described uses a laser beam defined by a suitable mask to ablate the undesired portion of the blanket layer to reveal the desired alignment marks.

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Excimer Laser Polysilicon Patterning

After blanket deposition on a silicon wafer of a layer, such as polysilicon, it is difficult to detect the alignment patterns for further processing. The method described uses a laser beam defined by a suitable mask to ablate the undesired portion of the blanket layer to reveal the desired alignment marks.

It is particularly difficult for automatic alignment equipment to read through a polysilicon layer to underlying alignment marks. Experiments have shown that by using an excimer laser with a 248nm beam through a metal mask, 3500 A thickness of polysilicon was removed without damaging the underlying alignment equipment. This method is simpler than using standard photo- lithographic methods to preserve the marks.

Disclosed anonymously.

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