Browse Prior Art Database

Integrated Circuit Conductor Line Self-Aligned to Contact Opening

IP.com Disclosure Number: IPCOM000061533D
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 2 page(s) / 48K

Publishing Venue

IBM

Related People

Kenney, DM: AUTHOR

Abstract

A technique is shown for producing self-alignment between a conductor line and a contact opening. This eliminates conductor level to contact hole level mask alignment tolerances. Fig. 1 shows a conductor line 10 and a contact 11 fabricated on a minimum definable lithographic pitch utilizing a masking technique which results in a self-aligned conductor line and contact opening. Fig. 2 shows the cross-section "A-A" of Fig. 1. A resist mask 12 is provided on the upper portion of insulating layer 13. A shallow line trench 14 is reactively ion etched (RIE) into insulator 13 through the mask 12 to form the path at conductor line 10. Fig. 3 shows the cross-section "B-B" of Fig. 1. A contact resist mask 15 is applied on top of the conductor line resist mask 12.

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Integrated Circuit Conductor Line Self-Aligned to Contact Opening

A technique is shown for producing self-alignment between a conductor line and a contact opening. This eliminates conductor level to contact hole level mask alignment tolerances. Fig. 1 shows a conductor line 10 and a contact 11 fabricated on a minimum definable lithographic pitch utilizing a masking technique which results in a self-aligned conductor line and contact opening. Fig. 2 shows the cross-section "A-A" of Fig. 1. A resist mask 12 is provided on the upper portion of insulating layer 13. A shallow line trench 14 is reactively ion etched (RIE) into insulator 13 through the mask 12 to form the path at conductor line 10. Fig. 3 shows the cross-section "B-B" of Fig. 1. A contact resist mask 15 is applied on top of the conductor line resist mask 12. A second opening orthogonal to the shallow line trench 14 is reactive ion etched through mask 15 and the exposed portion of the shallow line trench 14, to form a contact opening
16. Thus, the contact opening 16 is self-aligned to the shallow trench 14. Then a layer of tungsten (not shown) is vapor deposited into the shallow line trench 14 and contact opening 16. This creates a self- aligned conductor line 10 passing directly over the contact 11, with no alignment tolerances between the two orthogonal patterns 12 and 15.

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