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ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY IN SELECTIVELY DOPED GaAs/AlxGa1-xAs HETEROJUNCTIONS

IP.com Disclosure Number: IPCOM000061584D
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Theis, TN: AUTHOR [+2]

Abstract

A persistent photoconductivity impervious field-effect transistor having a metal gate over an AlxGa1-xAs region over a GaAs crystal where x

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ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY IN SELECTIVELY DOPED GaAs/AlxGa1-xAs HETEROJUNCTIONS

A persistent photoconductivity impervious field-effect transistor having a metal gate over an AlxGa1-xAs region over a GaAs crystal where x <N 0.2, the GaAs in turn on the side opposite the gate forms a heterointerface with a conductive region serving as a back gate which is held at a specific potential with respect to the drain. The structure is shown in cross section in Fig. 1, and the energy band diagram is shown in Fig. 2.

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