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Fabrication of Deep Ultraviolet Mask Pellicle

IP.com Disclosure Number: IPCOM000061602D
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Nguyen, V: AUTHOR [+2]

Abstract

A thin pellicle film of silicon oxy-nitride (SixOyNz), having a slight tensile stress, is formed on a silicon substrate by plasma-enhanced chemical vapor deposition (PECVD). The thin film is then bonded to a suitable mounting ring, and the silicon substrate is selectively etched away. The resulting pellicle is highly transparent to deep ultraviolet (UV) radiation and suitable for attachment to a quartz photomask. By adjustment of the PECVD parameters, a thin film of oxy-nitride is deposited on a silicon wafer such that the film has a slight internal tensile stress at room temperature. The oxy-nitride film thus formed is bonded to a mounting ring of suitable material, e.g., quartz, at or above room temperature to assure maintenance of the tensile stress in the film.

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Fabrication of Deep Ultraviolet Mask Pellicle

A thin pellicle film of silicon oxy-nitride (SixOyNz), having a slight tensile stress, is formed on a silicon substrate by plasma-enhanced chemical vapor deposition (PECVD). The thin film is then bonded to a suitable mounting ring, and the silicon substrate is selectively etched away. The resulting pellicle is highly transparent to deep ultraviolet (UV) radiation and suitable for attachment to a quartz photomask. By adjustment of the PECVD parameters, a thin film of oxy- nitride is deposited on a silicon wafer such that the film has a slight internal tensile stress at room temperature. The oxy-nitride film thus formed is bonded to a mounting ring of suitable material, e.g., quartz, at or above room temperature to assure maintenance of the tensile stress in the film. The silicon substrate is then selectively etched away, leaving the the thin oxy-nitride film, still under tensile stress, bonded to the mounting ring. Standard methods are used to attach this deep UV transparent pellicle to a deep UV transparent photomask. It is essential to the mechanical integrity of the oxy-nitride pellicle film that some tensile stress be maintained throughout its formation, and throughout all other processing steps.

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