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Isolation by Inert Ion Implantation

IP.com Disclosure Number: IPCOM000061613D
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fahrner, WR: AUTHOR [+3]

Abstract

This disclosure describes a new semiconductor process step that produces a buried intrinsic layer useful in electrical isolation in circuit functions. It is also useful in isolation between circuit functions and between circuits and the substrate The proposed method utilizes inert gas ion implantation and subsequent 'drive in' at elevated temperatures. The proposed method consists of implanting a buried intrinsic layer using non-doping and non- reacting ion species, such as the noble gases or hydrogen. Because of the desirability of utilizing low energy accelerations, the gases of choice are hydrogen and helium. For safety reasons helium is the final choice. The proposed method can achieve 3- to 10-micron depth with relatively low energy levels (1 to 2.5 MeV).

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Isolation by Inert Ion Implantation

This disclosure describes a new semiconductor process step that produces a buried intrinsic layer useful in electrical isolation in circuit functions. It is also useful in isolation between circuit functions and between circuits and the substrate The proposed method utilizes inert gas ion implantation and subsequent 'drive in' at elevated temperatures. The proposed method consists of implanting a buried intrinsic layer using non-doping and non- reacting ion species, such as the noble gases or hydrogen. Because of the desirability of utilizing low energy accelerations, the gases of choice are hydrogen and helium. For safety reasons helium is the final choice. The proposed method can achieve 3- to 10-micron depth with relatively low energy levels (1 to 2.5 MeV). This energy level is within the range of conventional gas ion-implantation equipment. The implantation step is followed by a 1000OEC annealing operation of the proper duration. The novelty in this disclosure is in the use of an inert gas ion (He) implantation to create the buried intrinsic layer as opposed to conventional methods using silicon, polysilicon, P-N and N-P junctions and other counter- doped epi layers. It utilizes a highly damaged layer to create the electrical isolation. The technique described utilizes a highly damaged layer to electrically isolate the substrate.

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