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Polyimide Surface Modification in H2S Plasma

IP.com Disclosure Number: IPCOM000061776D
Original Publication Date: 1986-Sep-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Goldblatt, RD: AUTHOR [+5]

Abstract

The present process allows direct metallization of a polyimide surface with Cu by promoting the chemical component of adhesion between the two layers. The use of polyimide as a dielectric in semiconductor manufacture is well established, as is the use of Cu for conducting circuitry. Ordinarily the adhesion of Cu directly to polyimide is not sufficiently strong, and an additional layer between these layers is required to satisfy adhesion requirements. The present process is to use hydrogen sulfide (H2S) plasma assisted etching to modify the surface of polyimide and thereby enhance adhesion of the polyimide to Cu. The modification via reactive ion etching (RIE) results in the incorporation of sulfur moieties into the polyimide which will then chemically interact with the subsequently applied Cu deposit.

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Polyimide Surface Modification in H2S Plasma

The present process allows direct metallization of a polyimide surface with Cu by promoting the chemical component of adhesion between the two layers. The use of polyimide as a dielectric in semiconductor manufacture is well established, as is the use of Cu for conducting circuitry. Ordinarily the adhesion of Cu directly to polyimide is not sufficiently strong, and an additional layer between these layers is required to satisfy adhesion requirements. The present process is to use hydrogen sulfide (H2S) plasma assisted etching to modify the surface of polyimide and thereby enhance adhesion of the polyimide to Cu. The modification via reactive ion etching (RIE) results in the incorporation of sulfur moieties into the polyimide which will then chemically interact with the subsequently applied Cu deposit. An order of magnitude increase in the peel strength of Cu lines on a polyimide surface is observed upon surface treatment with H2S plasma. There is a great deal of latitude in process parameters, such as RF power, H2S pressure and flow rate, and etch times. These parameters may be altered to create a more or less aggressive plasma depending upon the desired results. The present process is applicable to enhance the adhesion of Cu to any material which exhibits susceptibility to the incorporation of sulfur moieties via dry processes (e.g., RIE, plasma).

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