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Memory Cell Stabilization With Double Diffused Junctions

IP.com Disclosure Number: IPCOM000061843D
Original Publication Date: 1986-Sep-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Wong, RC: AUTHOR

Abstract

To improve memory cell stability against disturbs from alpha particles or cosmic rays, additional emitter-base junctions may be employed to add capacitance to the cell nodes. With the advances of bipolar technology, bases are shallower and Ceb is reduced and thus T3 and T4 need to be made larger to compensate for the reduction of capacitance. This will cause larger cell size and more pipe defects. To maintain this stabilization scheme in advanced bipolar technology, double diffused emitter-base junctions may be employed. For transistors T3 and T4, the bases are doubly diffused with a P+ ion implant (resistor implant) so that the base junctions are deeper and the base acceptor concentration is higher. Thus, the stabilization capacitances are increased and the pipe defects are minimized.

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Memory Cell Stabilization With Double Diffused Junctions

To improve memory cell stability against disturbs from alpha particles or cosmic rays, additional emitter-base junctions may be employed to add capacitance to the cell nodes. With the advances of bipolar technology, bases are shallower and Ceb is reduced and thus T3 and T4 need to be made larger to compensate for the reduction of capacitance. This will cause larger cell size and more pipe defects. To maintain this stabilization scheme in advanced bipolar technology, double diffused emitter-base junctions may be employed. For transistors T3 and T4, the bases are doubly diffused with a P+ ion implant (resistor implant) so that the base junctions are deeper and the base acceptor concentration is higher. Thus, the stabilization capacitances are increased and the pipe defects are minimized.

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