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Pattern Transfer of Nitride Etch by Using High Composition of Hydrogen in a Mixture of H2/cf4

IP.com Disclosure Number: IPCOM000061877D
Original Publication Date: 1986-Jul-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Houston, T: AUTHOR [+2]

Abstract

A CF4 and H2 etch gas mixture has been used in the prior art to enhance the selective etching of Si3N4 thin films. However, the high etch rate selectivity usually resulted in unwanted polymer residue formation. The amount of polymer formation is known to be directly related to the concentration of H2 in the etch gas.

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Pattern Transfer of Nitride Etch by Using High Composition of Hydrogen in a Mixture of H2/cf4

A CF4 and H2 etch gas mixture has been used in the prior art to enhance the selective etching of Si3N4 thin films. However, the high etch rate selectivity usually resulted in unwanted polymer residue formation. The amount of polymer formation is known to be directly related to the concentration of H2 in the etch gas.

It has been found, however, that polymerization can be eliminated through the use of a very high percentage of H2, greater than 70%. All the unsaturated radicals which are the sources of the polymer film are utilized in the etching process.

Disclosed anonymously.

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