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A Novel High Temperature Metal Deposition Lift-off Process Utilizing a Polyimide Structure

IP.com Disclosure Number: IPCOM000061878D
Original Publication Date: 1986-Jul-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Peterman, S: AUTHOR [+2]

Abstract

Hot metal deposition (110ŒC) is currently being utilized to enhance or achieve continuous metal step coverage. The lift-off process is limited by the metal deposition temperature due to characteristics of the resist. The metal coverage could be further improved if the metal deposition temperature could be lifted by 20 to 30ŒC. The modified process as disclosed below would allow higher metal deposition temperatures while at the same time providing an adequate lift-off structure.

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A Novel High Temperature Metal Deposition Lift-off Process Utilizing a Polyimide Structure

Hot metal deposition (110OEC) is currently being utilized to enhance or achieve continuous metal step coverage. The lift-off process is limited by the metal deposition temperature due to characteristics of the resist. The metal coverage could be further improved if the metal deposition temperature could be lifted by 20 to 30OEC. The modified process as disclosed below would allow higher metal deposition temperatures while at the same time providing an adequate lift-off structure.

The process sequence is as follows: 1) Referring to Fig. 1, following the previous interconnect level 10, a thin layer of polyimide 12 ( than or equal to 1 micron) is applied and baked; 2) Resist 14 is applied and patterned as usual producing a negative profile. Resist patterning is continuous into the polyimide during the same processing step; 3) Hot metal 10 is deposited at elevated temperatures (Fig. 2); and 4) The lift-off structure is removed as usual in hot NMP (75-85OEC).

Disclosed anonymously.

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