Browse Prior Art Database

Semiconductor Annealing Variable Heat Reflection

IP.com Disclosure Number: IPCOM000061971D
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Marks, RF: AUTHOR [+2]

Abstract

The use of a movable reflective metal foil outside an annealing cavity tube permits varying cavity reflectance which in turn permits improved control over heating and cooling.

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Semiconductor Annealing Variable Heat Reflection

The use of a movable reflective metal foil outside an annealing cavity tube permits varying cavity reflectance which in turn permits improved control over heating and cooling.

The structure is shown in the figure.

A slotted quartz tube is provided through which a reflective metal foil is inserted at the start of the heating cycle. Tantalum or chromium plated nickel is satisfactory. When rapid cooling is required, the reflective foil is withdrawn partially or completely. By selecting the proper location for the slot, uniform irradiation (temperature) at the sample surface can be maintained while reflector area is widely varied.

Disclosed anonymously.

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