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Laser Resist Stripping And Cleaning

IP.com Disclosure Number: IPCOM000061972D
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Anschel, M: AUTHOR [+3]

Abstract

The removal of negative photoresist following the etching of the patterned metallurgy on metallized ceramic and metallized ceramic polyimide parts is usually accomplished by a wet process using poisonous chemicals. Disclosed here is a simple dry stripping and cleaning process.

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Laser Resist Stripping And Cleaning

The removal of negative photoresist following the etching of the patterned metallurgy on metallized ceramic and metallized ceramic polyimide parts is usually accomplished by a wet process using poisonous chemicals. Disclosed here is a simple dry stripping and cleaning process.

In this process, negative photoresist can be simply removed from the underlying metal lines by blanket exposure of the entire part to pulsed laser radiation in ambient atmosphere which ablates or burns off the polymer. A particular example of this process is to use 248 nm radiation at 0.5 J/cm3, 1 HZ which removes the polymer in about 10 seconds without damaging the underlying metal. CO2 lasers may also produce similar or better results.

Disclosed anonymously.

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