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Etched Holes in a Substrate for Improvement of Film Adhesion

IP.com Disclosure Number: IPCOM000061981D
Original Publication Date: 1986-Sep-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cronin, J: AUTHOR

Abstract

Small holes are etched in a substrate surface prior to deposition of a film to assure adhesion between the film and the substrate. An implementation of this principle is described for assuring adhesion of a metal film deposited by chemical vapor deposition (CVD) on an insulating film. Shallow holes are etched part of the way through the insulating film while via holes are completely opened. Metal deposited by CVD fills all etched ho Metal adhesion is enhanced by the existence of the many holes in the insulating film substrate.

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Etched Holes in a Substrate for Improvement of Film Adhesion

Small holes are etched in a substrate surface prior to deposition of a film to assure adhesion between the film and the substrate. An implementation of this principle is described for assuring adhesion of a metal film deposited by chemical vapor deposition (CVD) on an insulating film. Shallow holes are etched part of the way through the insulating film while via holes are completely opened. Metal deposited by CVD fills all etched ho Metal adhesion is enhanced by the existence of the many holes in the insulating film substrate.

Referring to the figure, an insulating film 2 is deposited on silicon wafer 4. A via hole 6 is opened through insulating film 2 exposing the silicon wafer 4 surface. A large number of smaller holes 8 are etched part way through insulating film 2. Deep etching of via holes 6 and shallow etching of smaller holes 8 may be implemented through the use of two separate photomasks and etching steps. By using any of several techniques wherein depth of etching is controlled by hole diameter, both shallow holes 8 and via holes 6 may be defined with a single photomask. The CVD metal film 10 fills all holes, e.g. 6 and 8, and is found to have assured adherance to insulator film 2 throughout all subsequent standard integrated circuit processing when holes 8 are present.

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