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Process for Forming Smooth Conformal Metal With Backside Removal

IP.com Disclosure Number: IPCOM000061984D
Original Publication Date: 1986-Sep-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cronin, JE: AUTHOR [+3]

Abstract

This paper relates to a process by which a conformal metal is formed by chemical vapor deposition to a thickness greater than that required followed by a plasma etch-back process, such that the resulting film is smooth on the front side of a semiconductor wafer while being removed from the back side of the wafer.

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Process for Forming Smooth Conformal Metal With Backside Removal

This paper relates to a process by which a conformal metal is formed by chemical vapor deposition to a thickness greater than that required followed by a plasma etch-back process, such that the resulting film is smooth on the front side of a semiconductor wafer while being removed from the back side of the wafer.

During deposition of a conformal metal, small portions of the back side of the wafer may be exposed. Thus, a portion of the conformal metal may be deposited on the back side of the wafer. By depositing the conformal metal to a thickness greater than that required and etching back the film to the required thickness, a smooth front side surface results while also removing back side deposits.

Disclosed anonymously.

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