Browse Prior Art Database

Photoresist Removal by Nucleophilic Agents in Organic Solvents

IP.com Disclosure Number: IPCOM000062041D
Original Publication Date: 1986-Oct-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Davis, WJ: AUTHOR [+3]

Abstract

In the manufacture of semiconductor wafers it is necessary to strip photoresists from the surface of wafers. When the resists are hardbaked conventional stripping systems require a considerable amount of time to achieve the task and are prone to leaving residue on the surface. A new improved photoresist wet stripping system has been developed which is based on the addition of nucleophilic catalysts to a single solvent system, e.g., N-methyl-2-pyrrolidone (NMP). Actual nucleophilic agents used include dimethyl amino pyridine, imidazole, quinuclidine, diazobicyclo octane and hexamethylobetetramine.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Photoresist Removal by Nucleophilic Agents in Organic Solvents

In the manufacture of semiconductor wafers it is necessary to strip photoresists from the surface of wafers. When the resists are hardbaked conventional stripping systems require a considerable amount of time to achieve the task and are prone to leaving residue on the surface. A new improved photoresist wet stripping system has been developed which is based on the addition of nucleophilic catalysts to a single solvent system, e.g., N-methyl-2-pyrrolidone (NMP). Actual nucleophilic agents used include dimethyl amino pyridine, imidazole, quinuclidine, diazobicyclo octane and hexamethylobetetramine. In controlled experiments the wet stripping system using various nucleophilic agents and solvents improved the stripping time required to remove a hardbaked photoresist film from a silicon substrate by an order of magnitude over conventional methods. Additionally, it stripped a photoresist film hardbaked at over 200OEC, whereas conventional systems cannot effectively remove resists which have been baked above 150OEC. In addition to the reduction of organic residues and improved productivity realized, the system is completely water compatible, requiring no organic solvent rinses and has a low degree of toxicity. It is suitable for use with oxide and nitride surfaces.

1