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Serial Resistance Test Structure for Semiconductor Substrate and Polysilicon Conductive Layer

IP.com Disclosure Number: IPCOM000062081D
Original Publication Date: 1986-Oct-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 2 page(s) / 56K

Publishing Venue

IBM

Related People

Alcorn, CN: AUTHOR [+3]

Abstract

Fig. 1 illustrates the prior-art approach to performing a four-point sheet resistance test for an N-type silicon substrate region 14 and a polysilicon conductor structure 16 which occupies a separate layer from the substrate within which the structure 14 exists. As can be seen, the structure 14 consists of an N-type diffused region 22 which is formed by either thermal diffusion or ion implantation in a P-type silicon substrate 3. The objective is to pass a DC current from pad 1 to pad 4 and to monitor the IR drop through the resistive medium of the N-type diffusion 22 by means of applying test probes at pads 2 and 3. In a similar manner, Fig. 1 shows the polysilicon conductor test structure 16 which occupies a separate level from the semiconductor substrate 3.

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Serial Resistance Test Structure for Semiconductor Substrate and Polysilicon Conductive Layer

Fig. 1 illustrates the prior-art approach to performing a four-point sheet resistance test for an N-type silicon substrate region 14 and a polysilicon conductor structure 16 which occupies a separate layer from the substrate within which the structure 14 exists. As can be seen, the structure 14 consists of an N- type diffused region 22 which is formed by either thermal diffusion or ion implantation in a P-type silicon substrate 3. The objective is to pass a DC current from pad 1 to pad 4 and to monitor the IR drop through the resistive medium of the N-type diffusion 22 by means of applying test probes at pads 2 and 3. In a similar manner, Fig. 1 shows the polysilicon conductor test structure 16 which occupies a separate level from the semiconductor substrate 3. In a similar manner, a DC current is passed from the pad 5 through the polysilicon structure 26 to the pad 12 and the IR drop is then measured at the respective pads 6, 7, 8, 9, 10 and 11. The test can include a test for the resistance of various cross- sectional areas of the polysilicon conductor structure 26, as indicated in Fig. 1. The invention disclosed herein is illustrated in Fig. 2 and in the cross-sectional view thereof shown in Fig. 3. It is the object of the invention to eliminate pads 4 and 5 of Fig. 1 by serially connecting the N-type diffused structure 22 with the polysilicon conductor structure 26....