Browse Prior Art Database

Gas Etching System

IP.com Disclosure Number: IPCOM000062146D
Original Publication Date: 1986-Oct-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Dhong, SH: AUTHOR [+2]

Abstract

This article relates generally to integrated circuit construction and, more particularly, to reactive ion etching. The etching rate of polysilicon with respect to silicon dioxide in a reactive ion etching system can be improved by combining nitrogen with fluorocarbon. The combination enables better selectivity in semiconductor device fabrication.

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Gas Etching System

This article relates generally to integrated circuit construction and, more particularly, to reactive ion etching. The etching rate of polysilicon with respect to silicon dioxide in a reactive ion etching system can be improved by combining nitrogen with fluorocarbon. The combination enables better selectivity in semiconductor device fabrication.

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