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Low Temperature Photoresist Processing

IP.com Disclosure Number: IPCOM000062207D
Original Publication Date: 1986-Oct-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 2 page(s) / 92K

Publishing Venue

IBM

Related People

Ginzberg, AL: AUTHOR [+2]

Abstract

The use of a 0ŒC to 4ŒC temperature in development of a photoresist provides reproducible submicron dimensions with increased relative process latitudes. The behavior has been verified for Shipley 3000 and 2400 series resists. The edge profile of the developed resist is almost vertical with a slight lip, as shown in the drawing. The photoresist should be stored at room temperature and cooled when it is to be used.

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Low Temperature Photoresist Processing

The use of a 0OEC to 4OEC temperature in development of a photoresist provides reproducible submicron dimensions with increased relative process latitudes. The behavior has been verified for Shipley 3000 and 2400 series resists. The edge profile of the developed resist is almost vertical with a slight lip, as shown in the drawing. The photoresist should be stored at room temperature and cooled when it is to be used.

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