Browse Prior Art Database

Removal of Oxide And Surface Passivation of Copper Using Plasma

IP.com Disclosure Number: IPCOM000062242D
Original Publication Date: 1986-Oct-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Chan, KK: AUTHOR [+3]

Abstract

In the production of printed circuit boards and semiconductor devices, it is frequently necessary to remove oxide from copper surfaces. One technique for doing this is the use of wet chemical processes including HCl and Benzo Triaz

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Removal of Oxide And Surface Passivation of Copper Using Plasma

In the production of printed circuit boards and semiconductor devices, it is frequently necessary to remove oxide from copper surfaces. One technique for doing this is the use of wet chemical processes including HCl and Benzo Triaz

An alternative technique for accomplishing substantially the same result without the use of wet chemicals is to use a plasma process.

If an oxidized copper surface is exposed to an RF plasma struck from a gas mixture containing 70 percent nitrogen, 20 percent oxygen and 10 percent Freon- 14, the oxide will be removed and a copper-fluoride layer will be formed on the surface of the copper. This copper-fluoride layer will prevent subsequent oxidation of the copper surface.

Disclosed anonymously.

1