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Browse Prior Art Database

Sample Preparation for Cross-Sectioned Analysis

IP.com Disclosure Number: IPCOM000062351D
Original Publication Date: 1986-Nov-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 2 page(s) / 55K

Publishing Venue

IBM

Related People

Brady, MJ: AUTHOR [+2]

Abstract

This article relates generally to the preparation of semiconductor samples for analysis, and more particularly to sample preparation for cross-sectional transmission electron microscopy. Plasma etching of silicon samples as a preliminary step to ion milling reduces preparation time and increases the yield of acceptable specimens. The process for preparation of silicon wafer samples is set out in Figs. 1 and 2. Initially, the treaded wafer is coated with Al to a depth of about 2000 ˜. The slow etch rate of Al will protect the wafer treatment from destructive intrusion of the plasma into the region along the center line produced in a later sawing step. In step 1, two strips of treated silicon 1,2 are adhesively attached at their faces and bonded to slitted mounting rod 3 and retaining sleeve 4 that serve as a handling stage.

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Sample Preparation for Cross-Sectioned Analysis

This article relates generally to the preparation of semiconductor samples for analysis, and more particularly to sample preparation for cross-sectional transmission electron microscopy. Plasma etching of silicon samples as a preliminary step to ion milling reduces preparation time and increases the yield of acceptable specimens. The process for preparation of silicon wafer samples is set out in Figs. 1 and 2. Initially, the treaded wafer is coated with Al to a depth of about 2000 ~. The slow etch rate of Al will protect the wafer treatment from destructive intrusion of the plasma into the region along the center line produced in a later sawing step. In step 1, two strips of treated silicon 1,2 are adhesively attached at their faces and bonded to slitted mounting rod 3 and retaining sleeve 4 that serve as a handling stage. This assembly is sawed into disks that are each mechanically thinned, as in steps 2 and 3, to an approximate desired thickness. In step 4, each disk has a photoresist mask 5 applied to leave an open slot 6 and then the disks are subjected to etching in a plasma of oxygen and carbon tetrafluoride to produce the structure shown in Fig. 3. Samples can be etched from either side. Thereafter, in step 5, the samples are further thinned by ion milling to the ultimate desired thickness. Sample exposure to a focused electron beam normal to sample surface enable viewing structural definition.

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