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Resonant Tunneling Transistor

IP.com Disclosure Number: IPCOM000062601D
Original Publication Date: 1986-Dec-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Price, PJ: AUTHOR

Abstract

In resonant tunneling devices electrons tunnel through a double-barrier and enhanced resonant tunneling can occur through a level of the "quantum well" above the ground level, as well as through the ground level. A three-terminal device based on resonant tunneling is constructed by making use of excited-level tunneling. The device is a heterostructure with a double barrier between doped "emitter" (E) and "collector" (C) regions, with the barrier structure doped so that electrons fill the sub-band of the ground level of the quantum well to an energy below that of the second level.

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Resonant Tunneling Transistor

In resonant tunneling devices electrons tunnel through a double-barrier and enhanced resonant tunneling can occur through a level of the "quantum well" above the ground level, as well as through the ground level. A three-terminal device based on resonant tunneling is constructed by making use of excited-level tunneling. The device is a heterostructure with a double barrier between doped "emitter" (E) and "collector" (C) regions, with the barrier structure doped so that electrons fill the sub-band of the ground level of the quantum well to an energy below that of the second level. Under these conditions, the ground sub-band provides a conducting channel so that this central region can be biased independently and hence can function as a "base" (B), while resonant tunneling through the second level (or higher levels) allows electrons to flow from emitter to collector ("source" to "drain") when the three electrode potentials are in appropriate relation. An illustrative energy profile diagram for the device is shown in the drawing.

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In control of the E-C current by the E-B voltage, since the current comes from the emitter, it depends on the emitter Fermi energy relative to the quantum-well level in the base. In addition, the quantum-well levels will be somewhat shifted by any E-B bias and by any B-C bias, and hence this dependence provides a control of the current by the B-C voltage. The control may be enhanced by grading t...