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Spacer Width Measuring Technique

IP.com Disclosure Number: IPCOM000062725D
Original Publication Date: 1986-Nov-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Burton-Kelley, SB: AUTHOR [+2]

Abstract

A method is described for measuring the width of spacers disposed on the sides of a gate electrode.

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Spacer Width Measuring Technique

A method is described for measuring the width of spacers disposed on the sides of a gate electrode.

Two separate double diffused source/drain test structures are formed. One structure has the standard gate sidewall spacers SS as shown in Fig. 1. The other structure is formed without the spacers as shown in Fig. 2.

To find spacer width W, overlap capacitance C1 = L1K/tox and C2 = L2K/tox (where K = permitivity of free space times permitivity of the gate oxide and tox is the gate oxide thickness) is measured for each of the two test structures. difference, C2 - C1 = (L2 - L1)K/tox, is then found. Since L1 = axj - W and L2 = axj, where "a" is a lateral diffusion constant and xj is the measured diffusion depth, C2 - C1 = WK/tox and thus spacer width W = (C2 - C1)tox/K.

Disclosed anonymously.

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