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Improved Schottky Barrier Diode Process Yields

IP.com Disclosure Number: IPCOM000062735D
Original Publication Date: 1986-Nov-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Dalal, HM: AUTHOR [+2]

Abstract

A process improvement in the fabrication of Schottky Barrier Diodes is described. The process improvement involves the coating of, or passivation of, contact areas of the diode structure, to prevent undesirable chemical and physical reaction contamination in the area that result from follow on process by-products. The proper choice of the coating or passivation material isolates the surface of interest, from the undesirable process by-products, does not contaminate the surface being protected, is compatible with the process environment surrounding the diode fabrication, and is easily removed when the process step(s) is completed.

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Improved Schottky Barrier Diode Process Yields

A process improvement in the fabrication of Schottky Barrier Diodes is described. The process improvement involves the coating of, or passivation of, contact areas of the diode structure, to prevent undesirable chemical and physical reaction contamination in the area that result from follow on process by- products. The proper choice of the coating or passivation material isolates the surface of interest, from the undesirable process by-products, does not contaminate the surface being protected, is compatible with the process environment surrounding the diode fabrication, and is easily removed when the process step(s) is completed.

For example, as shown in the Figure, a 200 Angstrom thick layer of low temperature plasma oxide may be used to perform the conformal protective coating of the anode, before the first metal lift-off resist is applied. The oxide coating is subsequently etched off the surface (after completion of reactive ion etching), using the proper etchant e.g. buffered H.F., prior to t metal deposition.

The surface isolation technique does not require a process sequence change or modifications to the existing process steps except for blanket deposition of the protective layer and results in improvement in process yields.

Disclosed anonymously.

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