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Chemical Vapor Deposition of Gold

IP.com Disclosure Number: IPCOM000062753D
Original Publication Date: 1986-Nov-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Baum, TH: AUTHOR [+3]

Abstract

Gold metal can be deposited by chemical vapor deposition (CVD) from a complex of trivalent gold: dimethyl gold (III) acetylacetonate (DMG acac). Exposing a heated surface to the vapo this complex gives excellent quality metal with resistivities approaching that of bulk gold. This is quite unexpected, since gold in the complex is in an oxidation state of +3; in spite of this, a reducing atmosphere is not necessary to produce gold films by CVD from DMG acac. In addition, gold films can be deposited at surprisingly low temperatures; deposition proceeds at temperatures below 300C. Dimethylgold (III) acetylacetonate and derivatives are ideal precursors for the thermal deposition of high purity gold metal.

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Chemical Vapor Deposition of Gold

Gold metal can be deposited by chemical vapor deposition (CVD) from a complex of trivalent gold: dimethyl gold (III) acetylacetonate (DMG acac). Exposing a heated surface to the vapo this complex gives excellent quality metal with resistivities approaching that of bulk gold. This is quite unexpected, since gold in the complex is in an oxidation state of +3; in spite of this, a reducing atmosphere is not necessary to produce gold films by CVD from DMG acac. In addition, gold films can be deposited at surprisingly low temperatures; deposition proceeds at temperatures below 300C. Dimethylgold (III) acetylacetonate and derivatives are ideal precursors for the thermal deposition of high purity gold metal.

The CVD of gold can be accomplished in an inert gas flow (i.e. nitrogen) as well as in a flow of reducing gas. The rates of gold deposition are controllable and dependent upon the molecular structure of the organogold complex as well as the flow of gas in the CVD apparatus. The choice of rate conditions is critical and effects the final properties (microstructure) of the film. These characteristics allow high quality gold to be deposited by CVD onto various substrates for the microelectronics industry.

Disclosed anonymously.

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