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Growing Epitaxial Layers On Oxides

IP.com Disclosure Number: IPCOM000062800D
Original Publication Date: 1986-Dec-01
Included in the Prior Art Database: 2005-Mar-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Angilello, J: AUTHOR

Abstract

A method is described for growing epitaxial layers over oxide regions or amorphous regions. To do so, a moving slit (or moving substrate) is used to guide the epitaxial growth, as shown schematically in the figure.

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Growing Epitaxial Layers On Oxides

A method is described for growing epitaxial layers over oxide regions or amorphous regions. To do so, a moving slit (or moving substrate) is used to guide the epitaxial growth, as shown schematically in the figure.

The substrate l0 is a single crystal on which epitaxial growth can be accomplished by well known techniques. For example, atoms l2 of silicon directed to substrate l0 will epitaxially in regions A, B thereon. However, it is not easy to grow epitaxially or on oxide, such as oxide (SiO2) layer l4.

By translating crystal substrate l0, or by moving slit l6 parallel to and relative to the substrate, the Si atoms l2 will fall onto areas C, D, and E of oxide layer l4. Epitaxial growth onto these areas will then occur by an edge growth process.

(Image Omitted)

Disclosed anonymously.

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