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Measuring Latent Polarization of Thin Dielectric Films

IP.com Disclosure Number: IPCOM000072870D
Original Publication Date: 1970-Oct-01
Included in the Prior Art Database: 2005-Feb-22
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Dittmar, NR: AUTHOR

Abstract

A method is provided for determining the latent polarization of an unperturbed dielectric film by the creation of a thermo-stimulated current across a capacitor in which the insulator to be evaluated is the dielectric film.

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Measuring Latent Polarization of Thin Dielectric Films

A method is provided for determining the latent polarization of an unperturbed dielectric film by the creation of a thermo-stimulated current across a capacitor in which the insulator to be evaluated is the dielectric film.

A layer of the insulator 10 to be evaluated, is deposited upon a silicon substrate 11. The insulator is applied by any method, such as sputtering, pyrolytic deposition, evaporation, or doctoring. It is essential that insulative film 10 has not been previously thermally perturbed. Metal electrode 12 is applied to the surface of insulator film 10 by evaporation. A shielded probe 13 is coupled to electrode 12 and to a picoammeter 14 which has a negligible input resistance. An electrically isolated cartridge heater 15 heats the wafer rapidly, at a rate in the order of 200 degrees C per minute. The thermal stimulated current is integrated to a total which is recorded. The current total may be correlated into a measure of the extent of polarization. Since the potential across the film is constant, the current through the ammeter is:

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