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Browse Prior Art Database

Chromium Barrier for Terminal Metallurgies

IP.com Disclosure Number: IPCOM000072873D
Original Publication Date: 1970-Oct-01
Included in the Prior Art Database: 2005-Feb-22
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Leonard, RA: AUTHOR [+2]

Abstract

Miniaturized electrical device terminal metallurgies require thin barrier metal layers to provide for adhesion between layers and to prevent migration of materials from one layer to another. A continuous, non-porous chromium barrier layer is provided using evaporation techniques.

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Chromium Barrier for Terminal Metallurgies

Miniaturized electrical device terminal metallurgies require thin barrier metal layers to provide for adhesion between layers and to prevent migration of materials from one layer to another. A continuous, non-porous chromium barrier layer is provided using evaporation techniques.

A layer of chromium is first vacuum evaporated onto a surface and the vacuum broken for a short period to permit the chromium to oxidize at ~ 100 degrees C. The chromium oxide fills the porous areas in the chromium barrier layer. The thin surface layer of oxide is sputter cleaned away and a layer of, for example, phased chromium-copper is vacuum deposited. The resulting chromium under layer which is filled with chromium oxide in the originally porous areas effectively prevents the migration of material from or to the copper layer.

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