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Hillock Suppression in Aluminum Thin Films

IP.com Disclosure Number: IPCOM000072874D
Original Publication Date: 1970-Oct-01
Included in the Prior Art Database: 2005-Feb-22
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Barson, F: AUTHOR [+2]

Abstract

By using low power during deposition, a thin layer of RF sputtered SiO(1) suppresses hillock growth in aluminum thin films during the subsequent heat treatments required for forming the interconnections in semiconductor devices. A layer of SiO(2) of about 1000 angstroms is sputtered at low power (.045 watt/cm/2/) which keeps the substrate temperature < 150 degrees C; this is below the temperature at which substantial hillock growth occurs. The remainder of the film (typically 2-3 microns) is deposited, either by normal rate RF sputtering immediately following the deposition of the thin SiO(2) layer or by pyrolytic deposition. An alternative method is to provide an effective heat sink during RF sputtering to keep the substrate temperature at ~ 150 degrees C.

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Hillock Suppression in Aluminum Thin Films

By using low power during deposition, a thin layer of RF sputtered SiO(1) suppresses hillock growth in aluminum thin films during the subsequent heat treatments required for forming the interconnections in semiconductor devices. A layer of SiO(2) of about 1000 angstroms is sputtered at low power (.045 watt/cm/2/) which keeps the substrate temperature < 150 degrees C; this is below the temperature at which substantial hillock growth occurs. The remainder of the film (typically 2-3 microns) is deposited, either by normal rate RF sputtering immediately following the deposition of the thin SiO(2) layer or by pyrolytic deposition. An alternative method is to provide an effective heat sink during RF sputtering to keep the substrate temperature at ~ 150 degrees C. This SiO(2) layer structure provides adequate insulation and hillock suppression for the aluminum film.

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