Browse Prior Art Database

Insulator Sputtering

IP.com Disclosure Number: IPCOM000073348D
Original Publication Date: 1970-Dec-01
Included in the Prior Art Database: 2005-Feb-22
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Graves, BL: AUTHOR [+2]

Abstract

In the sputter deposition of an insulator, such as silicon dioxide from cathode target 10 to semiconductor wafers 12, it is a conventional practice to separate the wafers 12 from anode 14 by insulating spacers. To improve sputter deposition rate and uniformity, an insulating plate 16 covering the sputtering anode 14 and extending beyond its circumference may be used. In addition to improved deposition rate and uniformity, the insulating plate 16 eliminates sparking and provides a cleaner sputtering system than conventional insulating spacers.

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Insulator Sputtering

In the sputter deposition of an insulator, such as silicon dioxide from cathode target 10 to semiconductor wafers 12, it is a conventional practice to separate the wafers 12 from anode 14 by insulating spacers. To improve sputter deposition rate and uniformity, an insulating plate 16 covering the sputtering anode 14 and extending beyond its circumference may be used. In addition to improved deposition rate and uniformity, the insulating plate 16 eliminates sparking and provides a cleaner sputtering system than conventional insulating spacers.

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