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Removal of Junction Depth retardation of POCl(3) Emitter

IP.com Disclosure Number: IPCOM000073371D
Original Publication Date: 1970-Dec-01
Included in the Prior Art Database: 2005-Feb-22
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Defries, RM: AUTHOR

Abstract

Phosphorous oxychloride depositions cause a pile-up of impurities in phosphosilicate glass doped oxide diffusions. Exposure of the phosphosilicate glass formations prior to drive-in oxidation in a room temperature environment for a period of time will affect the solubility of the impurity to be diffused, causing network dislocations to form.

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Removal of Junction Depth retardation of POCl(3) Emitter

Phosphorous oxychloride depositions cause a pile-up of impurities in phosphosilicate glass doped oxide diffusions. Exposure of the phosphosilicate glass formations prior to drive-in oxidation in a room temperature environment for a period of time will affect the solubility of the impurity to be diffused, causing network dislocations to form.

Successive drive-in oxidation in the same process tube, as shown, at the same or higher operating temperature maintains the glass purity and hastens the removal rate of the phosphosilicate glass, allowing uniform gaussian drive-in to the phosphorous maximum solubility range. Drive in oxidation in the established environment of the heated wafers ensures purity and removes the rich phosphosilicate glass continuously at a uniform rate, to reduce the pile-up effect to maximum solubility.

Runs indicate that the retarded junction ranges for both >100| and >111| oriented silicon substrates can be removed to approach the maximum solubility range.

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