Browse Prior Art Database

Symmetrical Transistor Structure

IP.com Disclosure Number: IPCOM000073443D
Original Publication Date: 1970-Dec-01
Included in the Prior Art Database: 2005-Feb-22
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Davidson, EE: AUTHOR [+2]

Abstract

This transistor will give high-gain and good frequency response in both forward and reverse modes of operation.

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Symmetrical Transistor Structure

This transistor will give high-gain and good frequency response in both forward and reverse modes of operation.

The structure contains a hole 10 in its subcollector 12. This hole is right under the emitter 14 of the transistor and is approximately the same size. The hole is auto-doped by the subcollection diffusion 12 so that its concentration is greater than that of the base 16, but less than that of the subcollector 12. Because the barrier potential in this hole is less than the surrounding highly doped subcollector interface, most carriers will be injected immediately beneath the collecting emitter 14. The net result will be a higher emitter efficiency than the normal transistor structure.

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