Browse Prior Art Database

Making Magnetic Storage Elements

IP.com Disclosure Number: IPCOM000073476D
Original Publication Date: 1970-Dec-01
Included in the Prior Art Database: 2005-Feb-22
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Sulich, M: AUTHOR

Abstract

Magnetic memory element 10 comprises a conductive substrate, such as copper wire 11, having a plurality of discrete magnetic film storage cells 12. The storage cells 12 comprise concentric magnetic layers 13 and 14 separated by nonmagnetic barrier layer 15. The memory element 10 is formed by initially plating continuous magnetic layers of permalloy material separated by a continuous copper barrier layer 15 over a substantial length of wire 11, then etching the continuous layers to predetermined length to form the discrete storage cells 12. A process for forming the discrete storage cells comprises the following steps: 1) Coat the plated wire 11 with a photoresist material. 2) Expose the photoresist in the storage cell areas with radiant energy while masking the areas between the storage cells.

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Making Magnetic Storage Elements

Magnetic memory element 10 comprises a conductive substrate, such as copper wire 11, having a plurality of discrete magnetic film storage cells 12. The storage cells 12 comprise concentric magnetic layers 13 and 14 separated by nonmagnetic barrier layer 15. The memory element 10 is formed by initially plating continuous magnetic layers of permalloy material separated by a continuous copper barrier layer 15 over a substantial length of wire 11, then etching the continuous layers to predetermined length to form the discrete storage cells 12. A process for forming the discrete storage cells comprises the following steps: 1) Coat the plated wire 11 with a photoresist material. 2) Expose the photoresist in the storage cell areas with radiant energy while masking the areas between the storage cells. 3) Develop and then remove the exposed photoresist to uncover the magnetic material in the storage cell areas while retaining the unexposed photoresist in the inter-cell areas. 4) Selectively coat the uncovered magnetic material with etch resistant material. 5) Remove unexposed photoresist from inter-cell areas to uncover magnetic layer 14. 6) Apply etchants to uncovered areas to successively remove magnetic and copper barrier layers until wire 11 is uncovered in the inter-cell areas.

Photoresist materials and solvents useable in the above practice are well known. The selective coating of the storage cell areas is done by electrophoresis. A...