Browse Prior Art Database

Deposit and Clean Deposition System

IP.com Disclosure Number: IPCOM000073510D
Original Publication Date: 1970-Dec-01
Included in the Prior Art Database: 2005-Feb-22
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Garnache, RR: AUTHOR [+2]

Abstract

This apparatus provides for simultaneously performing deposition and cleaning of different sides of a wafer carrier in a continuous vapor deposition system.

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Deposit and Clean Deposition System

This apparatus provides for simultaneously performing deposition and cleaning of different sides of a wafer carrier in a continuous vapor deposition system.

Wafer carriers 1 slide on tracks 2 which provide separation of process tube 3 into two separate regions. The region above the carrier contains a deposit forming atmosphere such as SiCl(4) + H(2), and the region below the carrier contains cleaning, or etching material, such as HCl.

The carriers 1 are formed with wafer supporting depressions on both sides so that they may be inverted on successive passes through process tube 3. On a first pass wafers 4 are placed in the depressions in carrier 1 and a deposit 5, for example silicon, forms on both wafers and carriers. After the wafers have been removed, the carrier is inverted and passed through process tube 3, deposition occurs in the upper region while etching occurs in the lower region. Since the carriers are not attacked by the etchant, only the deposit 5' from the previous run is removed by the etch atmosphere. The carriers are ready for inversion and another run after each complete pass through the process tube. Inversion of the carriers between passes may be accomplished automatically by the use of a twisted return track.

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