Browse Prior Art Database

Microwave Absorption Memory

IP.com Disclosure Number: IPCOM000073519D
Original Publication Date: 1970-Dec-01
Included in the Prior Art Database: 2005-Feb-22
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Siegle, WT: AUTHOR

Abstract

This nondestructive readout memory utilizes the phenomena of RF microwave resonance absorption loss in a magnetic film 10. The magnetic film 10, which may be made of permalloy, has an easy axis arranged parallel to the direction of word lines W1, W2, W3 and W4 terminated by a common load 12 connected to ground. Perturb or bit lines B1, B2, B3 and B4 are disposed perpendicular to the word lines, or parallel to the hard axis of film 10. Intersections of the word and perturb lines define memory storage locations in film 10.

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Microwave Absorption Memory

This nondestructive readout memory utilizes the phenomena of RF microwave resonance absorption loss in a magnetic film 10. The magnetic film 10, which may be made of permalloy, has an easy axis arranged parallel to the direction of word lines W1, W2, W3 and W4 terminated by a common load 12 connected to ground. Perturb or bit lines B1, B2, B3 and B4 are disposed perpendicular to the word lines, or parallel to the hard axis of film 10. Intersections of the word and perturb lines define memory storage locations in film 10.

To write information into any of the storage locations, a write pulse W from RF excitation source 14 is applied to an appropriate word line, e.g., W2, through word selection circuitry 16 and coincidentally a write pulse B from bit pulse and selection circuitry 18 having an amplitude exceeding the magnetic switching threshold of film 10 is applied to an appropriate perturb line, e.g., B3, to store a bit of information at storage location W2, B3. The information stored depends on the polarity of the write pulse B, e.g., a positive pulse stores a 1 and a negative pulse stores a 0.

In order to read information from a storage location, e.g., W2, B3, in film 10, read pulse W, which may be similar to write pulse W, is applied to word line W2 through word selection circuitry 16. Coincidentally a wide, slow unipolar read pulse B, from bit pulse and selection circuitry B, having an amplitude less than the magnetic switching thre...