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Browse Prior Art Database

Creep Control in Magnetic Film Memory

IP.com Disclosure Number: IPCOM000073528D
Original Publication Date: 1970-Dec-01
Included in the Prior Art Database: 2005-Feb-22
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Daughton, JM: AUTHOR [+3]

Abstract

A magnetic film memory device having an electrically conductive layer of a critical thickness, interposed between storage film, e.g., of NiFeCo, and bit/sense and word lines, controls the domain wall motion even when hard axis fields of a bipolar nature with amplitude transition times of less than twenty nanoseconds are employed. The conductive layer has a thickness which produces eddy current time constants long enough to damp gyromagnetic behavior of total Bloch walls but short enough not to significantly affect switching characteristics of the memory device during read out.

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Creep Control in Magnetic Film Memory

A magnetic film memory device having an electrically conductive layer of a critical thickness, interposed between storage film, e.g., of NiFeCo, and bit/sense and word lines, controls the domain wall motion even when hard axis fields of a bipolar nature with amplitude transition times of less than twenty nanoseconds are employed. The conductive layer has a thickness which produces eddy current time constants long enough to damp gyromagnetic behavior of total Bloch walls but short enough not to significantly affect switching characteristics of the memory device during read out.

The electrically conductive layer may be made of chromium having a thickness between 1500 angstroms and two microns. If copper is used the layer is made considerably thinner than the chromium layer because of its lower resistivity. Layers of any nonmagnetic conductive metal may be utilized.

Supporting the NiFeCo film is a conductive substrate, e.g., made of copper, or aluminum, a thin chromium adhesion layer and a smoothing layer of SiO.

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