Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Autocatalytic Gallium Plating

IP.com Disclosure Number: IPCOM000073530D
Original Publication Date: 1970-Dec-01
Included in the Prior Art Database: 2005-Feb-22
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Ruddell, RL: AUTHOR

Abstract

High purity gallium is electrolessly deposited at temperatures up to 80 degrees C, from a bath of the following composition, after first activating the material to be plated with PdCl solution (1 gram/liter H(2)O). To 400 mililliters of deionized H(2)O add: GaCl(3) 20 grams K(3)C(6)H(5)O(7).H(2)O 20 grams KNaC(4)H(4)O(6).4H(2)O 20 grams. Adjust pH to 9.0 with concentrated NH(4)OH, add 20 grams of (CH(3))(2)NHBH(3) and dilute to 1 liter.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Autocatalytic Gallium Plating

High purity gallium is electrolessly deposited at temperatures up to 80 degrees C, from a bath of the following composition, after first activating the material to be plated with PdCl solution (1 gram/liter H(2)O). To 400 mililliters of deionized H(2)O add: GaCl(3) 20 grams K(3)C(6)H(5)O(7).H(2)O 20 grams KNaC(4)H(4)O(6).4H(2)O 20 grams. Adjust pH to 9.0 with concentrated NH(4)OH, add 20 grams of (CH(3))(2)NHBH(3) and dilute to 1 liter.

1