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Heterojunction Sensor for Semiconductor Charge Storage Memory Devices

IP.com Disclosure Number: IPCOM000073736D
Original Publication Date: 1971-Jan-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Agusta, B: AUTHOR [+2]

Abstract

In semiconductor devices consisting of closely spaced MOS capacitors on silicon substrate, it is necessary to detect charges, of picocoulombs or less, which are stored in the depletion region or potential wells formed under the capacitor electrodes. A detector of such charges may be made by forming a heterojunction on the substrate surface adjacent to the MOS capacitor. The heterojunction, when forward biased, senses these small charges by utilizing the fact that filling the potential well or notch in the heterojunction with carriers causes a change in the current-voltage characteristics and a subsequent forward current drop in the heterojunction.

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Heterojunction Sensor for Semiconductor Charge Storage Memory Devices

In semiconductor devices consisting of closely spaced MOS capacitors on silicon substrate, it is necessary to detect charges, of picocoulombs or less, which are stored in the depletion region or potential wells formed under the capacitor electrodes. A detector of such charges may be made by forming a heterojunction on the substrate surface adjacent to the MOS capacitor. The heterojunction, when forward biased, senses these small charges by utilizing the fact that filling the potential well or notch in the heterojunction with carriers causes a change in the current-voltage characteristics and a subsequent forward current drop in the heterojunction.

Forcing of a constant current through the heterojunction may also be utilized to sense the charges. The reverse characteristics of the heterojunction may also be used.

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