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Solid State Light Emitting Diodes

IP.com Disclosure Number: IPCOM000073791D
Original Publication Date: 1971-Feb-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+2]

Abstract

Monolithic arrays of solid state light-emitting diodes are realized in several ways through use of an n layer of Al(x)Ga(1-x)As, GaAs(x)P(i-x) or GaP grown by liquid phase epitaxy or vapor transport on p-type or semi-insulating GaAs or GaP substrate 10 as shown in Drawing A.

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Solid State Light Emitting Diodes

Monolithic arrays of solid state light-emitting diodes are realized in several ways through use of an n layer of Al(x)Ga(1-x)As, GaAs(x)P(i-x) or GaP grown by liquid phase epitaxy or vapor transport on p-type or semi-insulating GaAs or GaP substrate 10 as shown in Drawing A.

An array may be obtained by diffusing Zn in n-type overgrowth material and then mesa etching or cutting slots through the n layer to the substrate for isolation as shown in Drawing B.

Drawing C shows that an array may be obtained by diffusing Zn through Al(2)O(3) or P doped SiO(2) masks to make shallow p layer for p-n junctions, and then diffusing Zn deeply through another mask for isolation.

Further, an array may be obtained by growing another thin p layer on top of the n layer as shown in Drawing D, and then mesa etching or cutting slots as shown in Drawing E.

Other structures may be obtained by using n-type or semi-insulating substrate 12 for growing p layer first, e.g., as shown in Drawing F for p-n device, and Drawing G for n-p-n-p device.

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