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Magnetic Film Memory

IP.com Disclosure Number: IPCOM000073808D
Original Publication Date: 1971-Feb-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 56K

Publishing Venue

IBM

Related People

Axford, JG: AUTHOR

Abstract

The memory has magnetic thin films 10a, 10b,...10n with bit/sense lines 11 divided into groups on each of the films arranged parallel to the hard axis of the films. Corresponding bit/sense lines 11 from each group are connected to common sense circuits 22. Storage elements are defined by the intersection of bit/sense lines 11 and word lines 13 which are disposed orthogonally with respect to bit/ sense lines 11. Each group of elements in a column of one of the films stores a word and each word line 13 extends through all films 10a, 10b...10n. Means 19a, 19b...19n, 18a, 18b...18n and 12a, 12b... 12n provide a direct current bias to all elements in a selected film or group.

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Magnetic Film Memory

The memory has magnetic thin films 10a, 10b,...10n with bit/sense lines 11 divided into groups on each of the films arranged parallel to the hard axis of the films. Corresponding bit/sense lines 11 from each group are connected to common sense circuits 22. Storage elements are defined by the intersection of bit/sense lines 11 and word lines 13 which are disposed orthogonally with respect to bit/ sense lines 11. Each group of elements in a column of one of the films stores a word and each word line 13 extends through all films 10a, 10b...10n. Means 19a, 19b...19n, 18a, 18b...18n and 12a, 12b... 12n provide a direct current bias to all elements in a selected film or group. Simultaneous application of an alternating current signal of frequency w to a selected word line 13 by word drive 14, line 15 word select gate 16, and address lines 17 and a direct current bias by means 19, 18 and 12 to a selected film, e.g., 10a, produce output signals on the bit/sense lines 11 associated with the film predominantly of frequency w which are applied to the sense circuits 22, each having a filter 23 arranged to select frequency w, phase detector 24, a phase reference w and an output 25. The detected phase of the output signal signifies the data stored in the word. All other elements associated with the energized word line 13 produce output signals predominantly at frequency 2w, which are rejected by sensing circuits 22.

Information may be stored in the films b...