Browse Prior Art Database

Light Emitting Diode With Si Substrate

IP.com Disclosure Number: IPCOM000073862D
Original Publication Date: 1971-Feb-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Shang, DT: AUTHOR

Abstract

This method provides an economical light-emitting diode (LED) by using substrates of Si in lieu of GaAs.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Light Emitting Diode With Si Substrate

This method provides an economical light-emitting diode (LED) by using substrates of Si in lieu of GaAs.

At A, initially a P-type Si substrate 10 is provided.

At B, next a P layer 11 of GaAs is grown on substrate 10 using a liquid phase epitaxial solution growth process.

At C, next an N-region 12 using a Te dopant is diffused into the layer 11 forming PN junction 13. The resultant diode, when provided with appropriate electrodes, not shown, acts as a surface and/or edge emitter.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]